金属蒸着膜を形成した試料表面への電子線照射によるSIMSの絶縁物測定

抄録

In SIMS analysis of insulator surface, charge up on sample is one of the most serious problems. Recently, to solve the problem, a new method, combined with electron bombardment induced conductivity and the formation of an electrical conductive path, has been developed. This method has, however, some unkown factors, e. g. charge reduction mechanism. The purpose of this study is to make clear the charge reduction mechanism by comparing the new technique with the conventional electron-beam flooding method by using a quartz specimen. Basically, the charge reduction mechanism of the new technique is almost the same as that of the electron-beam flooding method which uses secondary electrons produced by electron-beam flooding. Formation of an electrical conductive path contributes to the adjustment of the excess or deficient suface electrons. By using the new method, it is possible to analyze insulators with a smaller prove size when compared with the analysis by the conventional electron-beam flooding method.