電解めっき法により作製したNi/GaAsショットキー接触の電気特性

抄録

This paper demonstrates that an electro-chemical process is suitable for fabrication of Ni/GaAs Schottky contacts in a controlled manner. Nearly ideal I-V characterisitics have been achieved by means of an anodic-etching process, prior to electroplating in the same bath as for electroplating. The Schottky barrier height for the almost ideal Ni/n-GaAs contact prepared by the above process has been found to be 0.81±0.01 eV.