CdZnSe-ZnSSe歪超格子の電子状態とバンド不連続

抄録

The conduction- and valence-bands offsets and the quantized energy levels of the quantum wells of CdZnSe/ZnSSe strained-layer superlattices have been calculated theoretically on an assumption of free-standing hetero-interface. From this study made with a view to understanding the fundamental electronic states, it was found that the states are greatly dependent upon the well-layer thickness. It was also revealed that the strains induced at the interface significantly modify the band lineups and associated electronic states. These results provide us with some useful information for designing the blue-green laser diodes based on this strained-layer system.