GaAs/GaP(001)ヘテロ成長における島状構造内の歪分布

抄録

Strain in GaAs island grown on GaP (001) substrate was calculated by a model proposed by Keating. This model assumed that the interaction between atoms was composed of two terms, central and noncentral forces. The calculations were performed by assuming the island shape to be a plate 0 of 2 to 10 ML in height and 8 to 46Å in length. Minimization of the strain energy was computed with a simplex method. The results show that the strain relaxes at the free edge of the island, and the degree of the relaxation depends on the width of the island. The relaxation is larger in a narrower island. This is consistent with the coherent island model recently proposed by Snyder et al.