Si表面でのO2分子線散乱で生成脱離するSiOの振動回転分布
1995 年 16 巻 9 号 p. 583-586
詳細
1995 年 16 巻 9 号 p. 583-586
Rovibrational state distributions of SiO desorbed from a Si(111) surface during O2 molecular beam scattering at 1250±50K are studied using resonance enhanced multiphoton ionization mass spectroscopy. Results show that the vibrational temperature is comparable with the surface temperature but the rotational temperature is lower than that.
