This paper describes attempts to synthesize thin SiC films by using dual ion beam deposition at non-elevated temperature. SiC is one of the most widely investigated materials because it has many attractive properties. Dual ion beam deposition in which two argon ion beams were employed, with one sputtering a silicon target to provide a Si flux, and the other bombarding the substrate on which films grow. Methane and ethene gas were introduced into the system with a partial pressure up to 1.8 × 10-2 Pa. The characteristics of resultant films were analyzed by Rutherford backscattering spectroscopy, Knoop micro hardness test. Films containing a different C:Si ratio, including stoichiometric SiC, have been successfully deposited at a rate-0.1nm/s. In addition to C and Si, films contain other atomic species present in the precursor molecules together with reasonably large concentrations of the ion bombardment species, Ar.