シリコン表面におけるGa細線の形成とその特性

抄録

Scanning tunneling microscopy/spectroscopy (STM/STS) and atom manipulation have been used to fabricate and evaluate atomic-scale structures on a hydrogen-terminated Si(100)-2×1-H surface. Atomic-scale Ga wires are fabricated by using selectively adsorbing thermally evaporated Ga atoms on the dangling-bond patterns. Electronic structures of the dangling-bond wires and theoretically predicted properties of the Ga structures, such as the conductivity and the flat-band ferromagnetic property are addressed.