1998 年 19 巻 11 号 p. 722-726
A scanning probe lithography that uses a current-controlled exposure system has been developed. We use a negativetype resist and fabricate line-and-space patterns to demonstrate characteristic parameters necessary for the present tech-nique to be applied in the industrial lithography. We find that the cross-setional shape of the developed resist pattern depends on the amount of the exposure dose. The resolution depends on the resist thickness and a minimum line width of 27nm is obtained for a 15-nm-thick resist. The proximity effect is much smaller than that of electron beam (EB) lithography. Electric-field mapping inside the resist is evaluated and the characteristics of the exposure system was explained based on the proposed exposure mechanism.