First-principles Calculations on Mechanisms of Semiconductor Epitaxial Growth

Atsushi OSHIYAMA

doi:10.1380/jsssj.19.141

半導体表面の成長機構と第一原理計算

押山淳

著者情報

ジャーナルフリー

1998 年 19 巻 3 号 p. 141-146

DOI https://doi.org/10.1380/jsssj.19.141

詳細

発行日: 1998/03/10 受付日: 1997/12/27 J-STAGE公開日: 2009/08/07 受理日: 1997/12/27 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 2) A. Oshiyama: Phys. Rev. Lett. 74, 130 (1995).
3) D.J. Chadi: Phys. Rev. Lett. 59, 1691 (1987).
4) D.S. Swartzentruber, Y.-W. Mo, R. Kariotis, M.G. Lagally and M.B. Webb: Phys. Rev. Lett. 65, 1913 (1990).
5) Y.-W. Mo, J. Kleiner, M.B. Webb and M.G. Lagally: Phys. Rev. Lett. 66, 1998 (1991).
6) D.M. Bird, L.J Clarke, R.D. King-Smith, M.C. Payne, I. Stich and A.P. Suttom: Phys. Rev. Lett. 69, 3785 (1992); J. Dabrowski, H.-J. Müsig and G. Wolff: Phys. Rev. Lett. 73, 1660 (1994); D.J. Eaglesham, A.E. White, L.C. Feldman, N. Moriya and D.C. Jacobson: Phys. Rev. Lett. 70, 1643 (1993).
7) M. Copel, M.C. Reuter, E. Kaxiras and R.M. Tromp: Phys. Rev. Lett. 63, 632 (1989).
8) A. Sakai and T. Tatsumi: Appl. Phys. Lett. 64, 52 (1994); S. Jeong and A. Oshiyama: Phys. Rev. Lett. 79, 4425 (1997); J. Nara, T. Sasaki and T. Ohno: ibid. 79, 4421 (1997).
9) B.D. Yu and A. Oshiyama: Phys. Rev. Lett. 72, 3190 (1994).
10) R.D. Bringhans, D.K. Biegelsen and L.-E. Swartz: Phys. Rev. B 44, 3054 (1991) and references therein.
11) B.D. Yu and A. Oshiyama: Phys. Rev. Lett. 71, 585 (1993).
12) B.D. Yu, T. Ide and A. Oshiyama: Phys. Rev. B 50, 14631 (1994).

Right : 2) A. Oshiyama: Phys. Rev. Lett. 74, 130 (1995).
3) D.J. Chadi: Phys. Rev. Lett. 59, 1691 (1987).
4) D.S. Swartzentruber, Y.-W. Mo, R. Kariotis, M.G. Lagally and M.B. Webb: Phys. Rev. Lett. 65, 1913 (1990).
5) Y.-W. Mo, J. Kleiner, M.B. Webb and M.G. Lagally: Phys. Rev. Lett. 66, 1998 (1991).
6) D.M. Bird, L.J Clarke, R.D. King-Smith, M.C. Payne, I. Stich and A.P. Suttom: Phys. Rev. Lett. 69, 3785 (1992); J. Dabrowski, H.-J. Müsig and G. Wolff: Phys. Rev. Lett. 73, 1660 (1994); D.J. Eaglesham, A.E. White, L.C. Feldman, N. Moriya and D.C. Jacobson: Phys. Rev. Lett. 70, 1643 (1993).
7) M. Copel, M.C. Reuter, E. Kaxiras and R.M. Tromp: Phys. Rev. Lett. 63, 632 (1989).
8) A. Sakai and T. Tatsumi: Appl. Phys. Lett. 64, 52 (1994); S. Jeong and A. Oshiyama: Phys. Rev. Lett. 79, 4425 (1997); J. Nara, T. Sasaki and T. Ohno: ibid. 79, 4421 (1997).
9) B.D. Yu and A. Oshiyama: Phys. Rev. Lett. 72, 3190 (1994).
10) R.D. Bringhans, D.K. Biegelsen and L.-E. Swartz: Phys. Rev. B 44, 3054 (1991) and references therein.
11) B.D. Yu and A. Oshiyama: Phys. Rev. Lett. 71, 585 (1993).
12) B.D. Yu, T. Ide and A. Oshiyama: Phys. Rev. B 50, 14631 (1994).

抄録

Density Functional Calculations which have been performed in order to reveal mechanisms of semiconductor epitaxial growth are reviewed. Two topics are discussed: First, appearance of {311} facets during the epitaxial growth on Si (100) surfaces; secondly precipitation of group V atoms during surfactant-mediated epitaxial growth of Ge on Si(100). In the first topic it is shown that step bunching inherent to Si(100) leads naturally to the {311} facet. In the second it is emphasized that the first adsorption geometry is crucial to the precipitation. Capability and possibility of first-principles calculations are emphasized.

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