Si Nanostructure Formation by Controlling Self-organization on the Surface

Masakazu ICHIKAWA

doi:10.1380/jsssj.19.551

表面自己組織化の制御によるSiナノ構造形成

市川昌和

著者情報

ジャーナルフリー

1998 年 19 巻 9 号 p. 551-556

DOI https://doi.org/10.1380/jsssj.19.551

詳細

発行日: 1998/09/10 受付日: 1998/03/30 J-STAGE公開日: 2009/08/07 受理日: 1998/03/30 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 論文抄録訂正内容: Wrong : We report nanostructure formation by controlling self-organization on Ga-adsorbed and ultra-thin oxide covered Si surfaces. On the Ga-adsorbed surface, we have formed clean Si stripe areas with atomically accurate size by Ga desorption from the step edges. Selective adsorption of Sb on such surfaces makes it possible to form nanoscale lateral p-n junction structures where Ga-adsorbed (p-type) and Sb-adsorbed (n-type) areas exist alternately on the surfaces. On the ultra-thin Si oxide film (<1 nm thickness) surface, we have found the phenomenon that 10 nm-size clean Si areas appear in the focused electron beam (EB)-irradiated areas after heating. After growing and heating Ge film on such surfaces, we have formed 10 nm-size Ge islands at given areas as a result of the selective surface reactions.
Right : We report nanostructure formation by controlling self-organization on Ga-adsorbed and ultra-thin oxide covered Si surfaces. On the Ga-adsorbed surface, we have formed clean Si stripe areas with atomically accurate size by Ga desorption from the step edges. Selective adsorption of Sb on such surfaces makes it possible to form nanoscale lateral p-n junction structures where Ga-adsorbed (p-type) and Sb-adsorbed (n-type) areas exist alternately on the surfaces. On the ultra-thin Si oxide film (<1 nm thickness) surface, we have found the phenomenon that 10 nm-size clean Si areas appear in the focused electron beam (EB)-irradiated areas after heating. After growing and heating Ge film on such surfaces, we have formed 10 nm-size Ge islands at given areas as a result of the selective surface reactions.

抄録

We report nanostructure formation by controlling self-organization on Ga-adsorbed and ultra-thin oxide covered Si surfaces. On the Ga-adsorbed surface, we have formed clean Si stripe areas with atomically accurate size by Ga desorption from the step edges. Selective adsorption of Sb on such surfaces makes it possible to form nanoscale lateral p-n junction structures where Ga-adsorbed (p-type) and Sb-adsorbed (n-type) areas exist alternately on the surfaces. On the ultra-thin Si oxide film (<1 nm thickness) surface, we have found the phenomenon that 10 nm-size clean Si areas appear in the focused electron beam (EB)-irradiated areas after heating. After growing and heating Ge film on such surfaces, we have formed 10 nm-size Ge islands at given areas as a result of the selective surface reactions.

責任著者(Corresponding author)

訂正情報

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