金属―半導体界面反応とその微視的観察

抄録

It has been recognized that several interesting phenomena, such as low temperature interfacial intermixing reactions or Fermi level pinning, occur at metal-semiconductor (M-S) interfaces. Moreover, from the practical point of view it is necessary to understand the mechanism of low temperature interfacial intermixing reactions in the development of highly reliable very large scale intergrated circuits (VLSI). To understand and control interfacial phenomena, the initial stage in the formation of M-S interface has been studied with electron spectroscopy (AES, ELS and LEED methods) and ion backscattering methods (channeling technique). Observations indicate that for metal films to react with semiconductor substrates to induce room temperature intermixing, the film thickness must exceed a ciritical value. This fact is felt to be an important clue in understanding intial stage mechanisms. In addition to the techniques mentioned above for the interface study, a tunable ELS method, and a method using electron spectroscopy combined with syncrotron orbital radiation (SOR), have been developed for non-destructive observation of M-S interfaces.