Structure Change on SiGe Surfaces Induced by Surface Hydrogen

Yoshihiro KOBAYASHI; Kenji SHIRAISHI; Koji SUMITOMO; Toshio OGINO

doi:10.1380/jsssj.20.696

水素吸脱着によるSiGe表面の構造変化

小林慶裕, 白石賢二, 住友弘二, 荻野俊郎

著者情報

ジャーナルフリー

1999 年 20 巻 10 号 p. 696-702

DOI https://doi.org/10.1380/jsssj.20.696

詳細

発行日: 1999/10/10 受付日: 1999/05/24 J-STAGE公開日: 2009/08/07 受理日: 1999/05/24 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 論文抄録訂正内容: Wrong : The surface composition of Ge/Si(001)2×1 surfaces after atomic hydrogen (H) irradiation was investigated using IR reflection spectroscopy in UHV. It was observed that H irradiation at room temperature causes etching of the surface Ge layer. However, when H is irradiated at elevated temperatures, the etching reaction does not occur. Instead, Ge at the surface moves into the subsurface region and Si atoms tend to exist on the topmost surface as monohydrides of mixed Ge-Si and pure Si-Si dimer structures. This behavior is remarkably different from that of Ge/Si(001) surfaces in absence of hydrogen, where Ge is segregated at the surface and forms Ge-Ge pure dimers. First-principles total energy calculations indicates that the presence of hydrogen reverses the stability of the surface composition from Ge to Si, in good agreement with the experimental results.
Right : The surface composition of Ge/Si(001)2×1 surfaces after atomic hydrogen (H) irradiation was investigated using IR reflection spectroscopy in UHV. It was observed that H irradiation at room temperature causes etching of the surface Ge layer. However, when H is irradiated at elevated temperatures, the etching reaction does not occur. Instead, Ge at the surface moves into the subsurface region and Si atoms tend to exist on the topmost surface as monohydrides of mixed Ge-Si and pure Si-Si dimer structures. This behavior is remarkably different from that of Ge/Si(001) surfaces in absence of hydrogen, where Ge is segregated at the surface and forms Ge-Ge pure dimers. First-principles total energy calculations indicates that the presence of hydrogen reverses the stability of the surface composition from Ge to Si, in good agreement with the experimental results.

訂正日: 2009/08/07 訂正理由: - 訂正箇所: 引用文献情報訂正内容: Wrong : 1) D.A. Grützmacher, T.O. Sedgwick, A. Powell, M. Tejwani, S.S. Iyer, J. Cotte and F. Cardone: Appl. Phys. Lett. 63, 2531 (1993).
2) A. Sakai and T. Tatsumi: Appl. Phys. Lett. 64, 52 (1994).
3) G. Ohta, S. Fukatsu, Y. Ebuchi, T. Hattori, N. Usami and Y. Shiraki: Appl. Phys. Lett. 65, 2975 (1994).
4) K. Nakagawa, A. Nishida, Y. Kimura and T. Shimada: J. Cryst. Growth 150, 939 (1995).
5) S. Zaima, K. Sato, T. Kitani, T. Matsuyama, H. Ikeda and Y. Yasuda: J. Cryst. Growth 150, 944 (1995).
6) Y. Kobayashi, H. Isaka and T. Ogino: Appl. Surf. Sci. 130/132, 314 (1998).
7) Y. Kobayashi, K. Sumitomo, K. Shiraishi, T. Urisu and T. Ogino: Surf. Sci. 436, 9(1999).
8) S.I. Gheyas, T. Urisu, S. Hirano, H. Watanabe, S. Iwata, M. Aoyagi, M. Nishio and H. Ogawa: Phys. Rev. B 58, 9949 (1998).
9) E. Rudkevich, F.L. Liu, D.E. Savage, T.F. Kuech, L. McCaughan and M.G. Lagally: Phys. Rev. Lett. 81, 3467 (1998).
11) Y. Kobayashi and T. Ogino: Surf. Sci. 368, 102 (1996).
12) F.M. Hoffman: Surf. Sci. Rep. 3, 107 (1983).
13) J.A. Mielczarski: J. Phys. Chem. 97, 2649 (1993).
14) Y.J. Chabal: Surf. Sci. Rep. 8, 211 (1988).
15) W. Erley, R. Butz and S. Mantl: Surf. Sci. 248, 193 (1991).
16) V.M. Bermudez and SM. Prokes: Surf. Sci. 248, 201 (1991).
17) Y. Kobayashi, K. Sumitomo, K. Prabhakaran and T. Ogino: J. Vac. Sci. Technol. A 14, 2263 (1996).
18) Y.J. Chabal, G.S. Higashi, K. Raghavachari and V.A. Burrows: J. Vac. Sci. Technol. A 7, 2104 (1989).
19) Y.J. Chabal and K. Raghavachari: Phys. Rev. Lett. 53, 282 (1984).
20) J.J. Boland: Surf. Sci. 261, 17 (1992).
21) S. Fukatsu, K. Fujita, H. Yaguchi, Y. Shiraki and R. Ito: Appl. Phys. Lett. 59, 2103 (1991).
22) D.R. Lide: “CRC Handbook of Chemistry and Physics, 78th ed.” (CRC Press, New York, 1997).

Right : 1) D.A. Grützmacher, T.O. Sedgwick, A. Powell, M. Tejwani, S.S. Iyer, J. Cotte and F. Cardone: Appl. Phys. Lett. 63, 2531 (1993).
2) A. Sakai and T. Tatsumi: Appl. Phys. Lett. 64, 52 (1994).
3) G. Ohta, S. Fukatsu, Y. Ebuchi, T. Hattori, N. Usami and Y. Shiraki: Appl. Phys. Lett. 65, 2975 (1994).
4) K. Nakagawa, A. Nishida, Y. Kimura and T. Shimada: J. Cryst. Growth 150, 939 (1995).
5) S. Zaima, K. Sato, T. Kitani, T. Matsuyama, H. Ikeda and Y. Yasuda: J. Cryst. Growth 150, 944 (1995).
6) Y. Kobayashi, H. Isaka and T. Ogino: Appl. Surf. Sci. 130/132, 314 (1998).
7) Y. Kobayashi, K. Sumitomo, K. Shiraishi, T. Urisu and T. Ogino: Surf. Sci. 436, 9(1999).
8) S.I. Gheyas, T. Urisu, S. Hirano, H. Watanabe, S. Iwata, M. Aoyagi, M. Nishio and H. Ogawa: Phys. Rev. B 58, 9949 (1998).
9) E. Rudkevich, F.L. Liu, D.E. Savage, T.F. Kuech, L. McCaughan and M.G. Lagally: Phys. Rev. Lett. 81, 3467 (1998).
11) Y. Kobayashi and T. Ogino: Surf. Sci. 368, 102 (1996).
12) F.M. Hoffman: Surf. Sci. Rep. 3, 107 (1983).
13) J.A. Mielczarski: J. Phys. Chem. 97, 2649 (1993).
14) Y.J. Chabal: Surf. Sci. Rep. 8, 211 (1988).
15) W. Erley, R. Butz and S. Mantl: Surf. Sci. 248, 193 (1991).
16) V.M. Bermudez and SM. Prokes: Surf. Sci. 248, 201 (1991).
17) Y. Kobayashi, K. Sumitomo, K. Prabhakaran and T. Ogino: J. Vac. Sci. Technol. A 14, 2263 (1996).
18) Y.J. Chabal, G.S. Higashi, K. Raghavachari and V.A. Burrows: J. Vac. Sci. Technol. A 7, 2104 (1989).
19) Y.J. Chabal and K. Raghavachari: Phys. Rev. Lett. 53, 282 (1984).
20) J.J. Boland: Surf. Sci. 261, 17 (1992).
21) S. Fukatsu, K. Fujita, H. Yaguchi, Y. Shiraki and R. Ito: Appl. Phys. Lett. 59, 2103 (1991).
22) D.R. Lide: “CRC Handbook of Chemistry and Physics, 78th ed.” (CRC Press, New York, 1997).

抄録

The surface composition of Ge/Si(001)2×1 surfaces after atomic hydrogen (H) irradiation was investigated using IR reflection spectroscopy in UHV. It was observed that H irradiation at room temperature causes etching of the surface Ge layer. However, when H is irradiated at elevated temperatures, the etching reaction does not occur. Instead, Ge at the surface moves into the subsurface region and Si atoms tend to exist on the topmost surface as monohydrides of mixed Ge-Si and pure Si-Si dimer structures. This behavior is remarkably different from that of Ge/Si(001) surfaces in absence of hydrogen, where Ge is segregated at the surface and forms Ge-Ge pure dimers. First-principles total energy calculations indicates that the presence of hydrogen reverses the stability of the surface composition from Ge to Si, in good agreement with the experimental results.

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