STMによるシリコン酸化膜を用いたナノ加工プロセス
1999 年 20 巻 6 号 p. 435-442
詳細
1999 年 20 巻 6 号 p. 435-442
Combined with thermal annealing, the locally confined low energy electron-beam from a scanning tunneling microscope (STM) tip can be used for nanofabrication of Si oxide film on Si substrate as nano-lithography mask; the oxide layer within the field emission a-beam exposed area can be decomposed, and then evacuated from the surface at elevated temperatures of about 600°C. Different manometer scale patterns of the oxide windows on Si substrate such as dot window arrays, lines, and circles can be formed. The minimum feature size attained so far is 25nm and the rms edge roughness of line patterns is less than 3.5nm. Mechanism and controllability of the STM nanofabrication processing are discussed.
