超音波顕微鏡による材料の評価
1985 年 6 巻 4 号 p. 325-330
詳細
1985 年 6 巻 4 号 p. 325-330
A scanning acoustic microscope operating in the frequency range 0.11GHz has been developed. To increase the resolution in the depth direction, it uses interference between reflected ultrasonic waves from a lens-water boundary to interfere as reference waves with waves reflected from a specimen. With this method, a high degreed of resolution in the depth direction is obtained.
The acoustic micrographs obtained have clearly demonstrated that this device can be used nondestructively to observe hydrogen-ion-doped regions in silicon crystals and spike defects at the edge of the local oxidation of silicon structures in semiconductor devices. In addition, the acoustical effects caused by plastic deformations of metal (Fe-3% Si alloy) are experimentally investigated using this device.
