1986 年 7 巻 1 号 p. 83-90
Fundamental aspects and present status of synchrotron radiation lithography (SRL) are described. The resolution is limited mainly by Fresnel diffraction and the penetration range of photoelectrons within the resist layer. Wavelength dependences of these factors indicate that the optimum resolution of 0.10.2μm can be obtained at the wavelength of 610Å. Throughput attainable with SRL in a step and repeat regime is evaluated on the basis of exposure field size which affords overlay accuracy of 1/4 of the minimum linewidth. The result shows that reasonable throughput in sub half micrometer pattern replication is possible by use of resists with moderate sensitivity in the order of 100mJ/cm2 or less if X-ray flux is as high as that produced by a normal storage ring with energy of 800MeV and current of 500mA. Discussions on requirements for compact storage ring, enlargement of exposure field, temperature rise in masks due to high flux irradiation, and factors affecting the overlay accuracy, together with some experimental results are also presented.