Present status of quantitative analysis by means of Secondary Ion Mass Spectrometry, which is a typical technique based on ion bombardment and secondary ion emission, is briefly summarized. Characteristic of this technique is marked dependence of the analytical values on the matrix of specimen and on analytical conditions, such as incident ion energy, its current intensity, beam diameter, and oxygen partial pressure in the sample chamber. Several methods have been developed for obtaining stable analytical value, and they are applied to the quantitative analysis of pure iron and GaAs. It is found that the relative errors are within ±30% and the detection limits of impurity elements in GaAs are 10141015 atoms/cm3.
