SiC焼結体の電気物性に及ぼす焼成温度の影響
1987 年 8 巻 3 号 p. 210-215
詳細
1987 年 8 巻 3 号 p. 210-215
In order to apply a sintered silicon carbide to electronic devices, the relationship between sintering condition and electrical properties was investigated. High-β-phase silicon carbide was sintered at varios temperatures between 1650°C and 2150°C for 0.5hr in a vacuum furnace. The dc conductivity, ac conductivity and I-V characteristic were measured for each sample.
The electrical conductivity of samples sintered below 2040°C was several times as high as that of samples sintered above 2050°C. The silicon carbides sintered above 2050°C showed remarkable frequency dependence of conductivity and non-linear I-V characteristics, whereas the samples sintered at below 2040°C showed slight frequency dependence of conductivity and was of ohmic conduction.
In order to explain the experimental results, an energy band model was proposed, and electrical conduction mechanism was discussed based on the model.
