有機金属気相法によるヘテロ・エピタキシャルZnTe薄膜の育成と表・界面の特性
1988 年 9 巻 5 号 p. 384-387
詳細
1988 年 9 巻 5 号 p. 384-387
Epitaxial layers of ZnTe were grown on (100) GaAs substrates by metalorganic chemical-vapour-deposition using dimethylzinc (DMZn) and dimethyltelluride (DMTe) as alkyl sources. The DMTe source was precracked because its high pyrolysis temperature is as high as 500°C.
The grown layers have been characterized by using scanning electron microscopy, X-ray diffraction, Auger electron spectroscopy and 4.2K PL techniques. It is shown that the photo-luminescence spectra of ZnTe epilayers depend upon (DMTe) / (DMZn) concentration ratio and upon the substrate temperature.
