抄録
Electro-thermal analysis of Si CMOS is performed. In order to have a higher degree of integration, the distance between two MOSFETs in CMOS structure must be decreased. But decreasing the distance between two MOSFETs results in an electrical interaction. In this research, we examine the interaction mechanism between n-type MOSFET and p-type MOSFET in Si CMOS in transient state. Numerical results show that the reason of the interaction between two MOSFET in CMOS is the forward bias at the pn junction with the substrate and that the timing of interaction becomes earlier and the leakage current increases as the distance between two MOSFET decreases. Furthermore, we investigate that the timing of interaction becomes later and the drain current decreases as the temperature of CMOS increases.
