抄録
ZnO films doped with 1.5 wt% Al2O3 (AZO films) have been deposited, in oxygen with a partial pressure of 0.1 Pa, on glass substrate using a pulsed laser deposition technique with an ArF laser (λ = 193 nm). When as-deposited, a repetition rate of 10 Hz, an energy density of 4 J/cm2, and an irradiation time of 30 min were used. After an annealing performed with the energy density 10∼40 mJ/cm2 for 30 min, it was found that resistivity decreased from 1.26×10-3 Ω · cm to 9.58×10-4 Ω · cm and surface roughness of the films Ra decreased from 2.1 nm to 1.8 nm.
© 2005 日本真空協会