We have observed SH intensity images of the hydrogen terminated Si(111) surface partly irradiated by UV light (hω=3.5 eV) in ultra-high vacuum using a SH microscope. The SH signal intensity of the surface covered with hydrogen was weak. Hydrogen desorption due to the UV light irradiation caused the enhancement of SH intensity. The observed SH intensity images of the H-Si(111) surface represent the spatial distribution of the surface electronic states created by the hydrogen deficiency. We have also investigated dependence on the UV light power of the hydrogen desorption from H-Si(111) surface using the SH microscope. These experimental results suggest that the observed hydrogen desorption results from the laser induced thermal desorption (LITD).