2006 年 49 巻 4 号 p. 254-258
We developed a chemical polishing (CP) for titanium materials applicable to ultrahigh vacuum (UHV) and extremely high vacuum (XHV) systems. The surface roughness, Ra, of the chemically polished titanium is obtained to be 25 nm by the atomic force microscopy measurement. This value is smaller than those of the base metal (BM) and the buff-polished (BP) samples. The thickness of the surface oxide layer of CP sample is estimated to be 7 nm by the cross section of transmission electron micrograph. Amount of desorption gas of CP sample obtained by the thermal desorption measurement is smaller than those of BM and BP sample, and is the same as that of the mechanochemically polished (MCP) sample. The outgassing rate of CP sample after baking at 150°C×20 h is obtained to be 7×10-13 Pa•m•s-1. This value is lower than that of standard vacuum materials by two orders of magnitude after the ordinary baking.