Abstract
TiN films have been successfully prepared by plasma CVD using TiI4, NH3 and H2 reaction gases. (111) oriented films with smooth and fine-grained surfaces were obtained at the substrate temperature between 450 and 750°C. On the other hand, non-oriented films with rugged surfaces were obtained at the substrate temperature of 850°C. The deposition rates of these films were 2730 nm/min. The lattice constants of these films decreased from 4.243 to 4.238Å with increasing the flow rate of N2 gas. Micro vickers hardness of the films was confirmed to be 1819 GPa under the optimum experimental conditions in the present study.
