抄録
A new macroscopic surface reaction model, which takes into account the adsorbed particle layer on the substrate, has been developed to calculate topological deformations in dry-etching microfabrication processes. The model is applied to silicon-dioxide trench etching. The following several kinds of reactions are well simulated on the basis of the unified surface reaction model. The first is the phenomenological differences between reaction-rate-limited and transport-limited cases in thermally induced chemical reaction. The second is a vertical profile formation of trench structures. This is based on the balance among chemical reactions, ion-assisted etching and polymer deposition on the side wall of trenches.
© 日本真空協会