We have developed a novel dual-ion-beam direct deposition apparatus. The machine consists of a positive ion beam line, a negative ion beam line and an ultrahigh-vacuum deposition chamber. The machine can generate mass-analyzed very-low-energy ion beams with positive and negative charges at the same time. It is possible to deposit both types of ions not only simultaneously but also alternately. The apparatus is called the TAOTRON and its nickname is PANDA (Positive And Negative ion Deposition Apparatus). Ion energy range is from 10 eV to 20 keV. Typical ion beam current is ≥10 μA depending on ion species. The base pressure of the deposition is on the order of 10-8 Pa and the pressure during deposition is on the order of 10-6 Pa. The machine has the potential to fabricate a wide range of ultrapure metals, semiconductors, insulators and other interesting materials such as c-BN, diamondlike carbon and SiC. It is also useful for the study of fundamental processes of ion beam deposition and/or ion-solid surface interactions.