2008 年 51 巻 12 号 p. 801-806
Due to the size reduction in structures, the difference in the electronic properties, for example, caused by the structural nonuniformity in each element, has an ever more crucial influence on macroscopic functions of semiconductor devices. And the direct observation of the characteristics, which provides us with the basis for the macroscopic analysis of the results, is of great importance. Thus, for further advances, a method for exploring the transient dynamics of the local quantum functions in organized small structures is eagerly desired. However, it is extremely difficult to obtain spatial and temporal resolutions simultaneously on this scale, which requires a new method; namely, new microscopy. In this paper, we introduce the shaken-pulse-pair-excited scanning tunneling microscopy (SPPX-STM), which we have developed these years. SPPX-STM enables us to observe the dynamics of electronic structures with the ultimate spatial and temporal resolutions.