Nitrogen doped tungsten oxide thin films were prepared by RF reactive sputtering in a gas mixture of argon, oxygen and nitrogen at room temperature. As a result of X-ray photoelectron spectroscopy, it was thought that the doped nitrogen in the films is bonding to tungsten of WO3 bonding states as anion and exits in substitution sites in WO3. The optical absorption edge was shifted to lower energy region with nitrogen doping. The nitrogen doped thin films exhibit a coloration to black from transparent yellow by electrochromism. Additionally, a new peak at 2.3 eV related to nitrogen doping is observed in the spectra of color center at bleaching process.
