2008 年 51 巻 5 号 p. 279-284
It has been demonstrated by previous studies that the chemisorption of molecules or atoms onto a solid surface can alter its intrinsic stress. Now this process has been turned on its head, with the chemical reactivity of the surface being altered by external stress. We report herein how the dissociation reactions of O2 on Cu(001), O covered Cu(001), and Si(001) surfaces are influenced by the stress. In each case the activation barriers for direct dissociation and/or for trapping precursor-mediated dissociation and the depth of trapping well are sensitively altered by the externally applied tensile stress. These results revealed that stress could significantly altered surface reactivity, and that the stress has the potential to control the surface reactions as well as the dynamics.