Journal of the Vacuum Society of Japan
Online ISSN : 1882-4749
Print ISSN : 1882-2398
ISSN-L : 1882-2398
重田 諭吉根岸 良太鈴木 雅彦
ジャーナル フリー

2008 年 51 巻 5 号 p. 291-297


  To study the relation between the strain and the electronic structure in two-dimensional (2D) nanoislands of Si and Ge on the Si(111)-7×7 surface, we made the nanoislands the same size and measured with the angle resolved ultraviolet photoelectron spectroscopy (ARUPS), the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). We also calculated the relation based on the density-functional theory. In the calculation, the dangling-bond state at the strained adatom on the nanoisland (SR state) shifts to lower energy, which has a liner dependence with the height of the adatoms. The ARUPS spectrum and the STS show characteristic peaks corresponding to the SR state, whose energy depends on the deformation of the adatom. The height of the adatom on the nanoisland estimated from the energy difference is consistent with a result of the STM measurement. The strain of adatoms can be estimated from the electronic structure.

© 2008 一般社団法人日本真空学会
前の記事 次の記事