ひずみ Si-p 型電界効果トランジスタのホール伝導特性に関する理論計算

抄録

  The strain effect on the hole transport properties in Si p-MOSFETs was investigated theoretically. We have calculated the subband structure of the two-dimensional hole gas in inversion layers using an empirical pseudopotential method and a k•p perturbation theory. Based on the obtained subband structures, the hole transport characteristics, i.e., the low field mobility, the injection velocity, and the saturation velocity, were computed numerically. We compared the impacts of the various stress application methods (tensile/compressive strains along uniaxial/biaxial directions). In the case of the <110> channel fabricated on Si(100) surface, it was demonstrated that the MOSFET performance can be enhanced effectively by the uniaxial compressive strain. The physical mechanisms behind the effect of the strain on the hole transport properties was discussed in detail.