超臨界流体を用いた Cu 薄膜の作製と半導体素子の配線・実装応用

抄録

  A supercritical fluids is a high-pressure medium that possesses unique features such as solvent ability and nano penetration capability. Using supercritical carbon dioxide fluids as a medium for thin film deposition provides excellent gap-filling and step-coverage possibilities. This article describes firstly the principle and characteristics of Cu thin film deposition in supercritical carbon dioxide. The results on deposition kinetics study are then exhibited, and it is shown that Cu deposition proceeds via Langmuir-Hinshelwood mechanism. The capability of filling nanogaps for LSI interconnects and of coating high-aspect through silicon vias are demonstrated.