Journal of the Vacuum Society of Japan
Online ISSN : 1882-4749
Print ISSN : 1882-2398
ISSN-L : 1882-2398
ビスマス超薄膜の電子構造:Rashba 効果と量子サイズ効果及びその協奏
平原 徹
ジャーナル フリー

2009 年 52 巻 11 号 p. 582-588


  Precise characterization of physical properties in nanometer-scale materials is interesting not only in terms of low-dimensional physics but also in application to devices. Due to the reduced dimensionality and symmetry, these systems possess various interesting properties that cannot be found in the bulk. In this article, focusing on epitaxial ultrathin bismuth films formed on a silicon substrate, we introduce an intriguing interplay of the quantum size and relativistic effects in reciprocal space. Utilizing spin- and angle-resolved photoemission spectroscopy, we observed clear Rashba-split nature of the surface-state bands in these Bi films which is a relativistic effect. However, the band dispersion did not follow the simple Rashba picture and the spin-splitting was lost where they overlapped with the bulk projection. From first-principles calculations, this is explained as a change in the nature of the band- splitting into an even-odd splitting induced by the quantum size effect.

© 2009 一般社団法人日本真空学会
前の記事 次の記事