Abstract
Effects of ultraviolet (UV) light irradiation on a polymer dry etching process have been investigated with the use of a low-energy mass-selected ion beam system. The effective etched depth of polymethylmethacrylate (PMMA) by CF3+ ion beam injection and/or UV light irradiation was evaluated from the decrement of PMMA film weight measured by a quartz crystal microbalance. A significant enhancement of the etched depth of PMMA was observed when a CF3+ ion beam was injected to PMMA substrate with UV light irradiation. The etched depth of PMMA during simultaneous irradiation of CF3+ ion beams and UV light was greater than the sum of those obtained from separate CF3+ ion beam or UV light irradiation processes.
