可溶クアテルチオフェンで作製した有機電界効果トランジスタの作製と評価

抄録

  We fabricated an organic thin film prepared by oligomers organic material according to the solution method and examined the quality of thin film by X-Ray diffractometer. Based on the results, we fabricated flexible-organic field effect transistors by spin-coating method. We adopted a polyethylenenaphthalate (PEN) film as the substrate, a cross-linked poly-4-vinylphenol (PVP) thin film as the gate dielectric insulation layer and a soluble quaterthiophene layer as an active layer. The carrier mobility of the prepared organic-field effect transistor, the threshold voltage and the ON/OFF ratio are 2.27×10^-3 cm²/Vs, -37 V and 3×10² respectively.