By irradiating ArF excimer laser with energies 40~70 mJ on the targets of ITO and AZO(Al-doped zinc oxide) by turns, the laminated transparent conducting films composed of ITO(50 nm)/AZO(250 nm) with a total films thickness of 300 nm were fabricated at substrate temperature of 220°C. At laser energy of 60 mJ, a sheet resistance of 6.12 Ω/□ was obtained under conditions of oxygen pressure of 0.5 Pa for ITO and 0 Pa for AZO. This value of 6.12 Ω/□ is superior to the value of 6.56 Ω/□ obtained from ITO thin films whose thickness is equal to the total thickness (300 nm) of the ITO/AZO films. As a result, 80 percent consumption of ITO was reduced at its maximum. After having examined environmental load, the sheet resistance of the laminated ITO/AZO transparent conductive oxide films did not change and therefore, the durability to the environmental conditions was maintained.
