KAGAKU KOGAKU RONBUNSHU
Online ISSN : 1349-9203
Print ISSN : 0386-216X
ISSN-L : 0386-216X
Silicon Surfaces Cleaning and Epitaxial Growth through Protective Oxidation and Hydrogen Termination
MASANORI MAYUSUMIMASATO IMAISHINJI NAKAHARAKAZUTOSHI INOUE
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JOURNALS FREE ACCESS

2000 Volume 26 Issue 6 Pages 754-757

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Abstract

Pretreatments before epitaxial furnace insertion were successfully performed for protective oxidation by ozonized ultrapure water and hydrogen termination by diluted HF. Before and after pretreatment, the surfaces were evaluated for surface cleanliness and chemical oxide thickness by X-ray photoelectron spectroscopy, and surface micro-roughness by atomic force microscopy. For both processes, a clean and smooth surface was obtained by removing the protective oxide and oxygen residues in heat treatment at 950°C in hydrogen. Pretreatment time varied for both processes, 5min for protective oxidation and approximately 1min for hydrogen termination. Attaining both pretreatment, a high quality epitaxial layer was obtained at conditions of 950°C, 1.01×105 and 4.00×104Pa.

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© by THE SOCIETY OF CHEMICAL ENGINEERS, JAPAN
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