日本機械学会論文集 A編
Online ISSN : 1884-8338
Print ISSN : 0387-5008
半導体チップのワイヤボンディングプロセスにおける損傷評価解析
池田 徹工藤 清輝宮崎 則幸宗像 健有田 潔焼山 英幸
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1996 年 62 巻 595 号 p. 872-877

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Wire bonding, which is a process of connecting a semiconductor chip and a lead frame by a thin metal wire, is one of the important processes in electronic packaging. This paper presents the damage estimation of a GaAs chip during the gold (Au) wire bonding process. The Au wire bonding process is carried out by pressing an Au ball made at a tip of the Au wire on a semiconductor chip and vibrating it by ultrasonication. High contact pressure is useful for shortening the process cycle; however, it sometimes causes damage to the semiconductor chip. Elastic plastic large-deformation contact analysis is performed and the distributions of the stress in a GaAs chip is investigated. The possibility of fracture under the usual wire bonding pressure is expected in a GaAs chip.
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