抄録
Wire bonding, which is a process of connecting a semiconductor chip and a lead frame by a thin metal wire, is one of the important processes in electronic packaging. This paper presents the damage estimation of a GaAs chip during the gold (Au) wire bonding process. The Au wire bonding process is carried out by pressing an Au ball made at a tip of the Au wire on a semiconductor chip and vibrating it by ultrasonication. High contact pressure is useful for shortening the process cycle; however, it sometimes causes damage to the semiconductor chip. Elastic plastic large-deformation contact analysis is performed and the distributions of the stress in a GaAs chip is investigated. The possibility of fracture under the usual wire bonding pressure is expected in a GaAs chip.