半導体浅溝型素子分離(SGI)構造の酸化反応誘起応力の検討

抄録

Using a finite element method analyzed the mechanism of stress development during thermal oxidation of shallow grooves on the top of silicon substrates for 0.25-μm semiconductor devices. The resolved shear stress concentrated at the upper and lower corners of the substrates. The shear stress increased as the total amount of oxidation increased. The shear stress at the lower corner was about two times higher than that at the upper corner because of a three-dimensional effect. The stress at both corners strongly depended on the width of the silicon substrate and the oxidation temperature.