スパッタ法によるステップカバレジの理論的研究

抄録

The process of film formation on trenches is analysed by calculating the motion of sputtered atoms in the pressure range of 0. 1-1 Pa. The step coverage depends on the pressure, the deposition probability, and the location of the trench. The step coverage of a trench located near the edge of the substrate is poor at 0. 1 Pa. However, it is much better at 0. 5 Pa. The decrease of the deposition probability drastically improves the step coverage, even at O. 1 Pa.