抄録
A numerical calculation is performed to simulate the heat transfer in silicon films with ultrashort-pulse laser irradiation. The key issue in the problem is the strong nonequilibrium nature of the free carriers (electrons and holes) and the crystal lattice induced by the ultrashort-pulse laser light with a pulse width typically less than 1 ps (picosecond). A phenomenological model that considers the nonequilibrium nature is developed and the resulting set of the carrier number density, carrier energy, and the lattice energy equations is solved numerically. Calculated results clearly exhibit the parameter dependence of the nonequilibrium film terperature rise and suggest a possible mechanism of the stiction reconvery of micro-cantilevers in microelectromechanical system devices.
