We derive the theoretical formula for grinding force acting on an ID-blade. and analyze the in-plane force and in-plane displacement of the D-blade. The results are summarized as follows. (1) The specific grinding force of 2 400 N/mm2 was obtained for single crystal silicon using the theoretical formula for grinding force. (2) The in-plane normal force SIθ caused by the tensioning operation is almost uniformly distributed in the electroplated part of the ID-blade. (3) Where tA and tB denote the thicknesses of the electroplated part and the steel base respectively, SIθ in the electroplated part is about tA/tB times greater than in the steel base at their boundary. (4) In-plane forces caused by both centrifugal force and grinding force are extremely small compared with the maximum value of SIθ. (5) The in-plane displacement caused by grinding force is strongly affected by the diameters of the work and ID-blades.