2009 年 75 巻 757 号 p. 2581-2588
This study aims to develop and propose an oscillation contolled lapping method, which uses a small diameter lap tool and is classed in the single wafer lapping system, as an effective method to achieve high precision controlled lapping of large sized silicon wafer. Our previously paper shows the fundamental controlled lapping characteristics under both the theoretical and the experimental examinations. On the other hand, the lapping characteristics are affected by the slurry flow. And also, the lapping chracteristics by the proposed method are changed with tool overhanging. Therefore, this paper describes the relations among the slurry flow, pressure distribution with tool overhanging and lapping characteristics of the proposed method based on a series of experiments and theoretical results using finite element analysis. It is founded that the slurry flow mechanism is changed greatly with an offset between the tool and the workpiece. Moreover, the controlled lapping within under 1μm is achieved by the proposed method.