Radiation damages of SiGe devices

抄録

Results are reported on the formation of lattice defects and the degradation of the electrical performance of Si1-xGex epitaxial diodes and heterojunction bipolar transistors (HBTs) after irradiation at room temperature with 2-MeV electrons, 1-MeV fast neutrons and 20-MeV protons. The influence of particle fluence and germanium content is studied, while the radiation source dependence is also investigated by comparing irradiation for different particles with respect to the damage coefficient and the number of knock-on atoms. Based on the observed recovery behavior resulting from isochronal thermal annealing, some possible explanations for the observed degradation and its dependence on germanium content are presented. In addition, the degradation of the electrical performance of Si1-xGex S/D diodes, which have been irradiated at room temperature with 2-MeV electrons, is reported with the performance of p-Ge-MOSFETs at liquid nitrogen temperature. Finally, an outlook will be given as future work.