2009 Volume 1 Pages 99-102
A transparent electrode of B-Ga2O3 films for solar cells, flat panel displays and other devices, which consist in chemically abundant and ecological elements of gallium and oxygen, were grow on quarts or silicon substrate by RF magnetron sputtering using sintered Ga2O3 target. The polycrystalline B-Ga2O3 grew by the thermal annealing after RF sputtering. It is important that oxygen introduction at the sputtering to obtain flat B-Ga2O3 film. The optical absorption coefficient over energy gap increased with decreasing Ar/O2 ratio. The impurity of Si was also doped into the grown films. From the measurement of optical absorption coefficient, it is concluded that the B-Ga2O3 energy gap increases with increasing Si concentration in the deposited film.
