2004 Volume 45 Issue 7 Pages 2018-2022
In-situ optical reflection measurements have been performed for a Si(100) surface under H+ irradiation to study dynamic change in the electronic structure of the silicon. The relative reflectance at 370 nm decreased almost linearly with displacement per atom (dpa) and was recovered by hydrogen release by 423 K annealing, suggesting that the change in the relative reflectance at 370 nm originates from the increase of hydrogen bonded to Si. With increasing H+ irradiation, the relative reflectance around 700 nm increased due to the formation of Si-H phase near the surface silicon. Furthermore, the broad minima of the relative reflectance shifted from 600 to 500 nm by H+ irradiation, probably correlating with amorphization or appearance of silicon micro/nano-crystal by displacement effect.