MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Control of Si Crystal Growth during Solidification of Si-Al Melt
Yuki NishiYoungjo KangKazuki Morita
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2010 Volume 51 Issue 7 Pages 1227-1230

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Abstract

The growth of Si crystals from a Si-55.3 at%Al melts was investigated with the aim of developing a new Si refining process for SOG-Si production. Si crystals were grown by directional solidification of the Si-Al alloy. The temperature at the bottom of the sample was controlled from 1273 K (the alloy’s liquidus temperature) to 1173 K. Bulk Si crystals were successfully obtained in this study, and the crystal growth was found to be controlled by the diffusion of Si in the melt. By controlling the crystal growth conditions, the Al content of the Si crystals could be decreased to the level of the solid solubility of Al in Si; furthermore, other impurity elements could be efficiently removed by this refining method.

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© 2010 The Japan Institute of Metals and Materials
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