MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Influence of Laser Plasma Soft X-Ray Irradiation on Crystallization of a-Si Film by Infrared Furnace Annealing
Naoto MatsuoNobuya IsodaAkira HeyaSho AmanoShuji MiyamotoTakayasu MochizukiNaoya Kawamoto
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2010 Volume 51 Issue 8 Pages 1490-1493

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Abstract

The influence of laser plasma soft X-ray (LPX) irradiation on crystallization of a-Si film by infrared (IR) furnace annealing is investigated. The crystallization temperature by LPX irradiation followed by IR annealing is lowered down to 420°C and the grain size increases up to 270 nm. This phenomenon is related with the change in characteristics of a-Si film which is generated by the bond distortion and relaxation during the LPX irradiation. It was found that the LPX-irradiated film is constituted by the two different layers and the refractive index of upper layer was lower than that of under layer. The dangling bond density of a-Si film was also decreased by LPX irradiation to a-Si film. From these results, the crystallization mechanism is discussed.

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© 2010 The Japan Institute of Metals and Materials
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