MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Characteristics of Thin-Film-Transistors Based on Zn–In–Sn–O Thin Films Prepared by Co-Sputtering System
K. J. ChenF. Y. HungT. S. LuiS. J. ChangT. Y. Liao
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2012 Volume 53 Issue 3 Pages 571-574

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Abstract

This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65 V/dec, a field-effect mobility (μFE) of 2.57 cm2 V−1 s−1, and an on/off current ratio (Ion/Ioff) of 104. The small SS and an acceptable μFE were associated with a smaller roughness and stable composition of ZITO channel layer.

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© 2012 The Japan Institute of Metals and Materials
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