Abstract
In this paper, we investigated the vacuum arc-deposited tetrahedral amorphous carbon (ta-C) and nitrogen-doped ta-C (ta-C:N) thin films grown on silicon and stainless-steel foil substrates by the visible Raman Spectroscopy. We found that carbon films grown on silicon surfaces prefer more sp3 hybridized carbon compared to the stainless-steel foil, which prefer more sp2 hybridized carbon even though the films are grown concurrently under the same conditions. The impact energy of plasma ions modifies the interfacial layer formation, giving a strong dependence of the sp2/sp3 ratio with the substrate bias, behaving differently for different substrates. However, nitrogen doping in amorphous carbon thin films helps to increase sp2 contents uniformly on both the surfaces for a fixed substrate bias. Understanding such interfaces are of interest for many electronic, optoelectronic, and energy storage devices as these interfaces get buried and can influence the properties significantly.
Fig. 1 CVA deposited amorphous carbon thin films concurrently grown on silicon and steel foil substrates. Each graph showing the as deposited films under the base pressure (the navy-blue curve) and the films grown under nitrogen partial pressure (pink curve). The dotted and dash lines represent the Gaussian fitted D- and G-peaks, respectively.
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