Deposition of TiC Film by Surface Wave Plasma with Titanium Counter Electrode

Abstract

TiC films were prepared by a process that combines microwave plasma CVD with a sputtering method using titanium electrode to improve film deposition speed. The film depositions were carried out while changing the substrate bias voltage to 0, −200, and −400 V. The flow rate of CH₄ gas was performed under three conditions of 2.0, 1.0, and 0 sccm. By applying the substrate bias voltage, titanium oxide was easily deposited and the film hardness was lowered. The film hardness was high in the specimens without the substrate bias voltage, and the maximum hardness was 22 GPa. The maximum film deposition speed was 24 µm/h.

Fig. 5 Relationship between film thickness and substrate bias voltage.